| MRC |
Requirement Statement |
Characteristics |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
800.0 MILLIWATTS |
| ADAU |
BODY HEIGHT |
0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAQ |
BODY LENGTH |
0.400 INCHES MAXIMUM |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
2 DRIVER, PERIPHERAL |
| CQSJ |
INCLOSURE MATERIAL |
RESIN |
| CQZP |
INPUT CIRCUIT PATTERN |
DUAL 2 INPUT |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| AGAV |
III END ITEM IDENTIFICATION |
DISK MEMORY UNIT TYPE MU-662/G |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND POSITIVE OUTPUTS AND HIGH VOLTAGE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
8 PRINTED CIRCUIT |
| CZEQ |
TIME RATING PER CHACTERISTIC |
110.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 110.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
