| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAQ |
BODY LENGTH |
0.760 INCHES NOMINAL |
| ADAT |
BODY WIDTH |
0.270 INCHES NOMINAL |
| CBBL |
FEATURES PROVIDED |
PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND EXPANDABLE |
| AFGA |
OPERATING TEMP RANGE |
-0.0 TO 75.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ |
TIME RATING PER CHACTERISTIC |
70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAU |
BODY HEIGHT |
0.150 INCHES NOMINAL |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
