| MRC |
Requirement Statement |
Characteristics |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| AFGA |
OPERATING TEMP RANGE |
-65.0 TO 125.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
0.4 MILLIWATTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| CBBL |
FEATURES PROVIDED |
BIPOLAR AND COMPATIBLE DTL AND HIGH SPEED |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
