| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
32 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQZP |
INPUT CIRCUIT PATTERN |
6 INPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 FLAT LEADS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
512.0 MILLIWATTS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
256 |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAQ |
BODY LENGTH |
0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| TEST |
TEST DATA DOCUMENT |
26916-058-002131 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
