| MRC |
Requirement Statement |
Characteristics |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
32 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND W/DISABLE AND W/ENABLE AND 3-STATE OUTPUT AND W/STORAGE AND POSITIVE OUTPUTS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.0 VOLTS MAXIMUM POWER SOURCE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
0.280 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
256 |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.890 INCHES MINIMUM AND 0.915 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
500.0 MILLIWATTS |
| ADAU |
BODY HEIGHT |
0.180 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND METAL |
