| MRC |
Requirement Statement |
Characteristics |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
32768 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
4096 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFGA |
OPERATING TEMP RANGE |
-40.0 TO 85.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.526 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
6.0 VOLTS MAXIMUM POWER SOURCE |
| ADAU |
BODY HEIGHT |
0.205 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND W/ENABLE AND PROGRAMMABLE AND ERASABLE AND HIGH SPEED AND 3-STATE OUTPUT |
