| MRC |
Requirement Statement |
Characteristics |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
800.0 MILLIWATTS |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
1024 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
65.00 MILLIAMPERES MAXIMUM SUPPLY |
| ADAQ |
BODY LENGTH |
1.185 INCHES MINIMUM AND 1.215 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.145 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.0 VOLTS MAXIMUM POWER SOURCE |
| CBBL |
FEATURES PROVIDED |
STATIC OPERATION AND 3-STATE OUTPUT AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND HERMETICALLY SEALED |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 125.0 DEG CELSIUS |
| ABKW |
III OVERALL HEIGHT |
0.325 INCHES NOMINAL |
| CZER |
MEMORY DEVICE TYPE |
EPROM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM ACCESS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
0.570 INCHES MINIMUM AND 0.605 INCHES MAXIMUM |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
8192 |
| ABHP |
III OVERALL LENGTH |
1.185 INCHES MINIMUM AND 1.235 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 70.0 DEG CELSIUS |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
