| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND BIPOLAR AND HIGH SPEED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND W/ENABLE AND W/STORAGE AND W/OPEN COLLECTOR |
| AGAV |
III END ITEM IDENTIFICATION |
COMPUTER,DIGITAL TYPE PDP11-10AC |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 75.0 DEG CELSIUS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| TEST |
TEST DATA DOCUMENT |
15476-23A04A2 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
625.0 MILLIWATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAQ |
BODY LENGTH |
0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
