| MRC |
Requirement Statement |
Characteristics |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS JUNCTION |
| ABJT |
TERMINAL LENGTH |
1.500 INCHES MINIMUM |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CTRK |
TRANSFER RATIO |
50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, RMS VALUE OF ALTERNATION COMPONENT |
| ADAV |
OVERALL DIAMETER |
0.335 INCHES MAXIMUM |
| CTRD |
POWER RATING PER CHARACTERISTIC |
800.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| ALBA |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE |
COLLECTOR |
| ABHP |
OVERALL LENGTH |
0.260 INCHES MAXIMUM |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
T0-5 |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| AYQS |
TERMINAL CIRCLE DIAMETER |
0.200 INCHES NOMINAL |
| ABBH |
INCLOSURE MATERIAL |
METAL |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
NPN |
