| MRC |
Requirement Statement |
Characteristics |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 FLAT LEADS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAT |
BODY WIDTH |
0.375 INCHES MINIMUM AND 0.395 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
8 INPUT |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAQ |
BODY LENGTH |
0.375 INCHES MINIMUM AND 0.395 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.090 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
500.0 MILLIWATTS |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
64 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
512 |
