| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 75.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
M0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| AGAV |
III END ITEM IDENTIFICATION |
CHEYENNE MISSILE MODEL 427M |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
625.0 MILLIWATTS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE AND W/STORAGE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND PROGRAMMABLE AND PROGRAMMED |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| TEST |
TEST DATA DOCUMENT |
11530-311325 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
