| Mfg. Part # | Mfg. Name | CAGE | RNCC | RNVC | ISC | MSDS | SADC | DAC | HCC |
|---|---|---|---|---|---|---|---|---|---|
| 0141A1004 | MARTIN MARIETTA TECHNOLOGIES INC | 54497 | C | 1 | 1 | D | |||
| 04EM072-1 | RAYTHEON CO | 24587 | 5 | 2 | 1 | ||||
| 0938008P001 | BAE SYSTEMS INFORMATION AND | 94117 | C | 1 | 1 | D | |||
| 1004 | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | C | 1 | 1 | N | |||
| 1836889 | RACAL RADAR DEFENCE SYSTEMS LTD | K1384 | 5 | 9 | 1 | ||||
| 1836889 | THALES UK LIMITED, AEROSPACE | U4338 | 5 | 2 | 1 | ||||
| 321052P5 | BAE SYSTEMS INFORMATION AND | 94117 | C | 1 | 1 | N | |||
| 3214006-001-560 | LOCKHEED MARTIN CORPORATION | 99696 | C | 1 | 1 | F | |||
| 3596474-1 | HONEYWELL INTL INC | 55974 | C | 1 | 1 | F | |||
| 48-055865-02 | NORTHROP GRUMMAN SYSTEMS CORPORATION | 15280 | 5 | 2 | 1 | ||||
| 529 | PHILIPS SEMICONDUCTORS INC | 18324 | C | 1 | 1 | F | |||
| 60710868-1 | NORTHROP GRUMMAN GUIDANCE AND | 34860 | 7 | 2 | 1 | ||||
| 7556681-013 | GENERAL DYNAMICS LAND SYSTEMS INC. | 13160 | C | 1 | 1 | D | |||
| 7845420P1 | LOCKHEED MARTIN CORPORATION | 03538 | C | 1 | 1 | N | |||
| 803960-1 | RAYTHEON COMPANY | 96214 | 5 | 2 | 1 | ||||
| 9360955 | U S ARMY ARMAMENT RESEARCH & | 19200 | 5 | 2 | 1 | ||||
| 938008P1 | BAE SYSTEMS INFORMATION AND | 94117 | E | 8 | 1 | ||||
| 999993-1 | RAYTHEON COMPANY | 96214 | C | 1 | 1 | T | |||
| A1004 | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | C | 1 | 1 | D | |||
| G163817-1 | RAYTHEON COMPANY | 49956 | C | 1 | 1 | D | |||
| G390532-1 | ITT CORPORATION | 24930 | 3 | 2 | 1 | ||||
| ICO-016 | BAE SYSTEMS | K0978 | 5 | 2 | 1 | ||||
| LM161H | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | E | 8 | 1 | ||||
| LM161H/883 | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | 5 | 2 | 1 | ||||
| LM161H/883B | ADELCO ELEKTRONIK GMBH | C7191 | 5 | 2 | 1 | ||||
| LM161H/883B | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | 5 | 9 | 1 | ||||
| LM161H/883BA | ADELCO ELEKTRONIK GMBH | C7191 | 5 | 9 | 1 | ||||
| LM161H/883C | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | 5 | 2 | 1 | ||||
| LM261H | NATIONAL SEMICONDUCTOR CORPORATION | 27014 | 5 | 9 | 1 | ||||
| LM361H | NATIONAL SEMICONDUCTOR CORP | 12040 | C | 1 | 1 | N | |||
| NE529K883B | PHILIPS SEMICONDUCTORS INC | 18324 | C | 1 | 1 | ||||
| SE529H | PHILIPS SEMICONDUCTORS INC | 18324 | C | 1 | 1 | N | |||
| SE529H/883B | PHILIPS SEMICONDUCTORS INC | 18324 | 5 | 2 | 1 | ||||
| SE529K/883B | PHILIPS SEMICONDUCTORS INC | 18324 | 5 | 9 | 1 |
| MRC | Requirement Statement | Characteristics |
|---|---|---|
| TTQY | TERMINAL TYPE AND QUANTITY | 10 PIN |
| CZEQ | TIME RATING PER CHACTERISTIC | 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CQSZ | INCLOSURE CONFIGURATION | CAN |
| TEST | TEST DATA DOCUMENT | 24930-G390532 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CQZP | INPUT CIRCUIT PATTERN | 4 INPUT |
| PRMT | III PRECIOUS MATERIAL | GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -6.0 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| AGAV | III END ITEM IDENTIFICATION | AN/SPS-48A(V)FCADT FSCM 24930 |
| CSSL | DESIGN FUNCTION AND QUANTITY | 1 COMPARATOR, VOLTAGE, DIFFERENTIAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND W/STROBE AND COMPLEMENTARY OUTPUTS AND POSITIVE OUTPUTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | GOLD |
| ADAR | BODY OUTSIDE DIAMETER | 0.355 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| PMLC | III PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD AND EYELET GOLD |
| CQSJ | INCLOSURE MATERIAL | GLASS AND METAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 600.0 MILLIWATTS |
