| MRC |
Requirement Statement |
Characteristics |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 200.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
8.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
8 INPUT |
| TEST |
TEST DATA DOCUMENT |
97942-128C682 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAQ |
BODY LENGTH |
0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
22.0 MILLIWATTS |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
1 GATE, NAND |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
