| MRC |
Requirement Statement |
Characteristics |
| ABHP |
OVERALL LENGTH |
0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ADAV |
OVERALL DIAMETER |
0.125 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
4 SEMICONDUCTOR DEVICE DIODE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
30.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
